silicon npn phototransistor, rohs compliant www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81504 342 rev. 1.6, 05-sep-08 BPV11 vishay semiconductors description BPV11 is a silicon npn phototransistor with high radiant sensitivity in clear, t-1? pl astic package with base terminal. it is sensitive to visible and near infrared radiation. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 15 ? base terminal connected ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? detector for industrial electronic circuitry, measurement and control note test condition see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 127 8 5 product summary component i ca (ma) ? (deg) 0.1 (nm) BPV11 10 15 450 to 1080 ordering information ordering code packaging remarks package form BPV11 bulk moq: 3000 pcs, 3000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit collector base voltage v cbo 80 v collector emitter voltage v ceo 70 v emitter base voltage v ebo 5v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation t amb 47 c p v 150 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
document number: 81504 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.6, 05-sep-08 343 BPV11 silicon npn phototrans istor, rohs compliant vishay semiconductors fig. 1 - power dissipation li mit vs. ambient temperature note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 2 - collector dark current vs. ambient temperature fig . 3 - relative collector curr ent vs. ambient temperature 0 40 8 0 120 160 200 p v - po w er dissipation (m w ) t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 94 8 300 r thja basic characteristics parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector emitter dark current v ce = 10 v, e = 0 i ceo 150na dc current gain v ce = 5 v, i c = 5 ma, e = 0 h fe 450 collector emitter capacitance v ce = 0 v, f = 1 mhz, e = 0 c ceo 15 pf collector base capacitance v be = 0 v, f = 1 mhz, e = 0 c cbo 19 pf collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v i ca 310 ma angle of half sensitivity ? 15 deg wavelength of peak sensitivity p 850 nm range of spectral bandwidth 0.1 450 to 1080 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 1 ma v cesat 130 300 mv turn-on time v s = 5 v, i c = 5 ma, r l = 100 t on 6s turn-off time v s = 5 v, i c = 5 ma, r l = 100 t off 5s cut-off frequency v s = 5 v, i c = 5 ma, r l = 100 f c 110 khz 94 8 249 20 i ceo - collector dark c u rrent (na) 100 40 60 8 0 t am b - am b ient temperat u re (c) 10 10 1 10 2 10 3 10 4 v ce = 10 v 0 0.6 0. 8 1.0 1.2 1.4 2.0 20 40 60 8 0 100 1.6 1. 8 94 8 239 t am b - am b ient temperat u re (c) i ca rel - relati v e collector c u rrent v ce = 5 v e e = 1 m w /cm 2 = 950 nm
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81504 344 rev. 1.6, 05-sep-08 BPV11 vishay semiconductors silicon npn phototransistor, rohs compliant fig. 4 - collector light current vs. irradiance fig. 5 - collector light current vs. collector emitter voltage fig. 6 - amplification vs. collector current fig. 7 - collector base capacitance vs. collector base voltage fig. 8 - collector emitter capacit ance vs. collector emitter voltage fig. 9 - turn-on/turn-off time vs. collector current 0.01 0.1 1 0.01 0.1 1 10 100 i ca - collector light c u rrent (ma) e e - irradiance (m w /cm2) 10 94 8 244 v ce = 5 v = 950 nm 0.1 1 10 0.1 1 10 100 i ca - collector light c u rrent (ma) v ce - collector emitter v oltage ( v ) 100 94 8 272 e e = 1 m w /cm 2 = 950 nm 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 0.02 m w /cm 2 0.01 0.1 1 10 0 200 400 600 8 00 b - amplification i c - collector c u rrent (ma) 100 94 8 250 v ce = 5 v 0.1 1 10 0 4 8 12 16 20 c cbo - collector base capacitance (pf) v cb - collector base v oltage ( v ) 100 94 8 246 f = 1 mhz 0.1 1 10 0 4 8 12 16 20 c ceo - collector ermitter capacitance (pf) v ce - collector ermitter v oltage ( v ) 100 94 8 247 f = 1 mhz 16 12 8 4 0 94 8 253 0 2 4 6 8 12 t on /t off - t u rn-on/t u rn-off time ( s) i c - collector c u rrent (ma) 10 v ce = 5 v r l = 100 = 950 nm t off t on
document number: 81504 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.6, 05-sep-08 345 BPV11 silicon npn phototrans istor, rohs compliant vishay semiconductors fig. 10 - relative spectral sensitivit y vs. wavelength fig. 11 - relative radiant sensitivity vs. angular displacement package dimensions in millimeters 400 600 1000 0 0.2 0.4 0.6 0. 8 1.0 s ( ) rel - relati v e spectral sensiti v ity - w a v elength (nm) 94 8 34 8 8 00 s rel - relati v e sensiti v ity 94 8 24 8 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 0 0.2 0.4 ? - ang u lar displacement chip position 0. 8 + 0.2 - 0.1 iss u e:1; 01.07.96 0.15 dra w ing- n o.: 6.544-51 88 .01-4 specifications according to di n technical dra w ings 0.5 area not plane 0.15 0.3 0.5 5.75 0.15 0.5 e b 5 0.3 + 0.15 0. 8 c 1.5 0.25 - 0.1 + 0.2 0. 8 - 0.1 + 0.2 - 0.1 + 0.2 1.27 nom. 2.54 nom. 12.3 (4.55) 7.6 35 < 0.7 8 .6 r 2. 45 (sphere) 96 12200
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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